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| Light Emitting Diode(GaN) KLM-821G KLM-821G has a 1W High power GaN green LED and has the optimized optical characteristics. DIMENSIONS Reference Features * Low forward voltage operated * More Energy Efficient than incandescent and most halogen lampes Applications * Portable flashlight * Bollards,Security,Garden lighting * LCD Back light * General lighting Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Operating temperature Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 350 1000 1000 -30 ~ + 110 -40 ~ +120 260 Unit V mA mA mW C C C *1. IFP Measured under duty 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Flux Doninant Wave Length Spectral half bandwidth Half angle Symbol VF Im d Conditions IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA Min 520 Typ 2.5 60 20 90 Max 530 - [ Ta=25C ] Unit V lm nm nm deg. 1/2 Light Emitting Diode(GaN) KLM-821G Forward current vs. Ambient temperature (IF) 500 Radiant Intensity vs. Forward current 1.5 Forward current IF(mA) 400 Relative intensity 1 300 Rth(J-A)=60/W Rth(J-A)=50/W 200 100 0 Rth(J-A)=40/W Rth(J-A)=30/W 0.5 0 25 50 75 100 () 125 0 0 (IF) 100 200 300 350 400 450 500 Ambient temperature Ta Forward current IF Relative radiant intensity vs. Ambient temperature Relative radiant intensity PO 1.2 10 Relative intensity vs. Wavelength 1 Intensity [arb.] 0 20 40 60 80 100 () 0.8 0.6 0.4 0.2 1 0.1 -20 0 400 450 500 550 600 650 Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage 450 400 350 300 250 200 100 50 0 0 Radiant Pattern Angle(deg) Forward current IF 0 +4 +60 +20 0 -20 -4 0 0 -6 50 -80 -100 +80 +100 0 100 50 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 100 Relative intensity(%) 2/2 |
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